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MLP PD & Thermal Data
To assist users to achieve effective designs with the innovative MLP™ ( Micro Leaded Package™) devices Zetex has conducted extensive work to conclusively prove the thermal and PD capabiIity of these new packages. The results of this work are provided in the following tables below.
1) MLP322™( 3 Leaded 2mm x 2mm MLP)
Single Die Bi-polar transistor or MOSFET
| Power Dissipation at TA=25°C (a) Linear Derating Factor |
PD |
1.5
12 |
W
mW/°C |
| Power Dissipation at TA=25°C (b) Linear Derating Factor |
PD |
2.45
19.6 |
W
mW/°C |
| Power Dissipation at TA=25°C (d) Linear Derating Factor |
PD |
1
8 |
W
mW/°C |
| Power Dissipation at TA=25°C (e) Linear Derating Factor |
PD |
3
24 |
W
mW/°C |
| Operating and Storage Temperature Range |
TJ:Tstg: |
-55 to +150 |
°C |
Thermal Resistance
| Parameter |
Symbol |
Value |
Unit |
| Junction to Ambient (a) |
RθJA |
83 |
°C/W |
| Junction to Ambient (b) |
RθJA |
48 |
°C/W |
| Junction to Ambient (d) |
RθJA |
125 |
°C/W |
| Junction to Ambient (e) |
RθJA |
42 |
°C/W |
NOTES ( 2mm x 2mm MLP)
(a) For a single device surface mounted on 10 sq cm 1oz copper on FR4 PCB in still air conditions with all exposed pads attached.
(b) For a single device surface mounted on 10 sq cm 1oz copper on FR4 PCB in still air conditions measured at t<5 secs with all exposed pads attached.
(c)Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.
(d) For a single device surface mounted on 10 sq cm 1oz copper on FR4 PCB, in still air conditions with minimal lead connections only.
(e) For a single device surface mounted on 65 sq cm 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached.
(f) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device, as shown in the package dimensions data. The thermal resistance for a device mounted on 1.5mm thick FR4 board using minimum copper of 1oz weight and 1mm wide track is Rth=300°C/W giving a power rating of Ptot=420mW
2) MLP832( 8 Leaded 2mm x 2mm MLP)
Dual Die Bi-polar transistor or MOSFET combination
| Power Dissipation at TA=25°C (a)(f) Linear Derating Factor |
PD |
1.5
12 |
W
mW/°C |
| Power Dissipation at TA=25°C (b)(f) Linear Derating Factor |
PD |
2.45
19.6 |
W
mW/°C |
| Power Dissipation at TA=25°C (c)(f) Linear Derating Factor |
PD |
1
8 |
W
mW/°C |
| Power Dissipation at TA=25°C (d)(f) Linear Derating Factor |
PD |
1.13
9 |
W
mW/°C |
| Power Dissipation at TA=25°C (d)(g) Linear Derating Factor |
PD |
1.7
13.6 |
W
mW/°C |
| Power Dissipation at TA=25°C (e)(g) Linear Derating Factor |
PD |
3
24 |
W
mW/°C |
| Operating and Storage Temperature Range |
TJ:Tstg: |
-55 to +150 |
°C |
Thermal Resistance
| Parameter |
Symbol |
Value |
Unit |
| Junction to Ambient (a)(f) |
RθJA |
83.3 |
°C/W |
| Junction to Ambient (b)(f) |
RθJA |
51 |
°C/W |
| Junction to Ambient (c)(f) |
RθJA |
125 |
°C/W |
| Junction to Ambient (d)(f) |
RθJA |
111 |
°C/W |
| Junction to Ambient (d)(g) |
RθJA |
73.5 |
°C/W |
| Junction to Ambient (e)(g) |
RθJA |
41.7 |
°C/W |
NOTES ( 3mm x 2mm MLP)
(a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(c) For a dual device surface mounted on 8 sq cm single sided 2oz copper FR4 PCB, in still air conditions with minimal lead connections only.
(d) For a dual device surface mounted on 10 sq cm single sided 1oz copper FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(e) For a dual device surface mounted on 85 sq cm single sided 2oz copper FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(f) For dual device with one active die.
(g) For dual device with 2 active die running at equal power.
(h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.
(I) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper of 1 oz weight, 1mm wide tracks and one half of the device active is Rth= 250°C/W giving a power rating of Ptot=500mW
3) MLP832( 8 Leaded 2mm x 2mm MLP) Schottky diode and Bi-polar transistor or MOSFET combination
( Values are for the Schottky die only as 2) applies to the Bipolar transistor or MOSFET die.)
| Power Dissipation at TA=25°C (a)(f) Linear Derating Factor |
PD |
1.2
12 |
W
mW/°C |
| Power Dissipation at TA=25°C (b)(f) Linear Derating Factor |
PD |
2
20 |
W
mW/°C |
| Power Dissipation at TA=25°C (c)(f) Linear Derating Factor |
PD |
0.8
8 |
W
mW/°C |
| Power Dissipation at TA=25°C (d)(f) Linear Derating Factor |
PD |
0.9
9 |
W
mW/°C |
| Power Dissipation at TA=25°C (d)(g) Linear Derating Factor |
PD |
1.36
13.6 |
W
mW/°C |
| Power Dissipation at TA=25°C (e)(g) Linear Derating Factor |
PD |
2.4
24 |
W
mW/°C |
| Operating and Storage Temperature Range |
TJ:Tstg: |
-55 to +150 |
°C |
Thermal Resistance
| Parameter |
Symbol |
Value |
Unit |
| Junction to Ambient (a)(f) |
RθJA |
83.3 |
°C/W |
| Junction to Ambient (b)(f) |
RθJA |
51 |
°C/W |
| Junction to Ambient (c)(f) |
RθJA |
125 |
°C/W |
| Junction to Ambient (d)(f) |
RθJA |
111 |
°C/W |
| Junction to Ambient (d)(g) |
RθJA |
73.5 |
°C/W |
| Junction to Ambient (e)(g) |
RθJA |
41.7 |
°C/W |
NOTES ( 3mm x 2mm MLP)
(a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(c) For a dual device surface mounted on 8 sq cm single sided 2oz copper FR4 PCB, in still air conditions with minimal lead connections only.
(d) For a dual device surface mounted on 10 sq cm single sided 1oz copper FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(e) For a dual device surface mounted on 85 sq cm single sided 2oz copper FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(f) For dual device with one active die.
(g) For dual device with 2 active die running at equal power.
(h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.
(I) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper of 1 oz weight, 1mm wide tracks and one half of the device active is Rth= 250°C/W giving a power rating of Ptot=400mW
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